Standard test method for separating an ionizing radiation - induced mosfet threshold voltage shift into components due to oxide trapped holes and interface states using the subthreshold current - voltage characteristics 利用亚阈值安伏特性测定由于氧化空穴和界面态产生的电离辐射感应金属氧化物半导体场效应晶体管阈电压偏移分量的标准试验方法